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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4420BDY-T1-GE3 Datasheet PDF
SI4420BDY-T1-GE3
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SI4420BDY-T1-GE3 Datasheet PDF (8 Pages)
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SI4420BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Polarity
N-Channel
Power Dissipation
1.4W (Ta)
Drain to Source Voltage (Vds)
30.0 V
Continuous Drain Current (Ids)
13.5 A
Power Dissipation (Max)
1.4W (Ta)

SI4420BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4420BDY-T1-GE3 Documents

Vishay Siliconix
8 Pages / 0.17 MByte

SI4420BDYT1 Documents

VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET N-CH 30V 9.5A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R
Vishay Intertechnology
Vishay Intertechnology
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