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Part Datasheet Search > MOSFETs > VISHAY > SI4420BDY-T1-GE3 Datasheet PDF
SI4420BDY-T1-GE3
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SI4420BDY-T1-GE3 Datasheet PDF (6 Pages)
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SI4420BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
8.5 mΩ
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9.5A
Rise Time
11 ns
Input Power (Max)
1.4 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

SI4420BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI4420BDY-T1-GE3 Documents

VISHAY
6 Pages / 0.11 MByte
VISHAY
8 Pages / 0.17 MByte

SI4420BDYT1 Documents

VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ω; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
VISHAY
SOIC-8 N-CH 30V 9.5A 8.5mΩ
Vishay Siliconix
MOSFET N-CH 30V 9.5A 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 9.5A 8Pin SOIC N T/R
Vishay Intertechnology
Vishay Intertechnology
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