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SI4463BDY-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC-8

Description:

SOIC-8P-CH 20V 9.8A 11mΩ

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3D Model

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Documentation:

SI4463BDY-T1-E3 Datasheet (8 Pages)

SI4463BDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0085 Ω

Polarity

P-Channel

Power Dissipation

1.5 W

Threshold Voltage

1.4 V

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

13.7 A

Rise Time

60 ns

Input Power (Max)

1.5 W

Fall Time

75 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3000 mW

View Datasheet >

SI4463BDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

View Datasheet >

SI4463BDY-T1-E3 Environmental

SI4463BDY-T1-E3 Function Overview

SI4463BDY-T1-E3 Documents

SI4463BDY-T1-E3 Datasheet

VISHAY

8 Pages / 0.16 MByte

SI4463BDY-T1-E3 Other Datasheet PDF

VISHAY

53 Pages / 1.48 MByte

SI4463BDYT1 Documents

SI4463BDY-T1-E3 Datasheet PDF

VISHAY

SOIC-8P-CH 20V 9.8A 11mΩ

SI4463BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC

SI4463BDY-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC

SI4463BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET P-CH 20V 9.8A 8SOIC

SI4463BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET 20V 13.7A 3W 11mohm @ 10V

SI4463BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8P-CH 20V 9.8A 11mΩ

SI4463BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

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