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Part Datasheet Search > VISHAY > SI4463BDY-T1-GE3 Datasheet PDF
SI4463BDY-T1-GE3
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SI4463BDY-T1-GE3 Datasheet PDF (53 Pages)
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SI4463BDY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
11 mΩ
Polarity
P-CH
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
9.8A
Rise Time
60 ns
Fall Time
75 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3000 mW

SI4463BDY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
2500

SI4463BDY-T1-GE3 Documents

VISHAY
53 Pages / 1.48 MByte

SI4463BDYT1 Documents

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SOIC-8P-CH 20V 9.8A 11mΩ
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MOSFET; P-Channel; -20V; + 12V; 0.009Ω @ -4.5V, -13A; 1.5W @ degC
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MOSFET 20V 13.7A 3W 11mohm @ 10V
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SOIC-8P-CH 20V 9.8A 11mΩ
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