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Part Datasheet Search > Visay > SI4482DY Datasheet PDF
SI4482DY
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SI4482DY Datasheet PDF (4 Pages)
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SI4482DY Specifications

TYPE
DESCRIPTION
Case/Package
SOIC-8
Power Dissipation
2.5 W
Rise Time
12 ns
Fall Time
25 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI4482DY Documents

Visay
4 Pages / 0.15 MByte

SI4482 Documents

Vishay Siliconix
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Vishay Siliconix
MOSFET 100V 4.6A 2.5W
Temic
Power Field-Effect Transistor, 4.6A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Visay
N-Channel 100V (D-S) MOSFET
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