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SI4490DY
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SI4490DY Datasheet PDF
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SI4490DY Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO
Drain to Source Resistance (on) (Rds)
80.0 mΩ
Polarity
N-Channel
Power Dissipation
1.56 W
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
2.85 A

SI4490 Documents

VISHAY
SOIC-8 N-CH 200V 2.85A 80mΩ
VISHAY
SOIC-8 N-CH 200V 2.85A 80mΩ
Vishay Semiconductor
MOSFET 200V 4A 3.1W 80mohm @ 10V
Vishay Siliconix
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET 200V 4A 3.1W 80mohm @ 10V
Vishay Siliconix
MOSFET 200V 4A 3.1W
Vishay Siliconix
Transistor
Vishay Semiconductor
Trans MOSFET N-CH 200V 2.85A 8Pin SOIC N
VISHAY
Transistor: N-MOSFET; unipolar; 200V; 3.2A; 3.1W; SO8
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