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SI4501BDY-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOIC

Description:

SOIC-8 N+P 30V,8V 12A 13.5mΩ,21mΩ

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Documentation:

SI4501BDY-T1-GE3 Datasheet (14 Pages)

Package Outline Dimension on12 Page

Part Numbering System on1 Page

SI4501BDY-T1-GE3 Datasheet PDF (14 Pages)

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SI4501BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0135 Ω

Polarity

N+P

Power Dissipation

4.5 W

Threshold Voltage

800 mV

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

12A

Input Capacitance (Ciss)

805pF @15V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.1 W

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SI4501BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

2500

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SI4501BDY-T1-GE3 Environmental

SI4501BDY-T1-GE3 Documents

SI4501BDY-T1-GE3 Datasheet

VISHAY

14 Pages / 0.25 MByte

SI4501BDY-T1-GE3 Other Datasheet PDF

VISHAY

15 Pages / 0.2 MByte

SI4501BDY-T1-GE3 Notice File

VISHAY

3 Pages / 0.08 MByte

SI4501BDYT1 Documents

SI4501BDY-T1-GE3 Datasheet PDF

VISHAY

SOIC-8 N+P 30V,8V 12A 13.5mΩ,21mΩ

SI4501BDY-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R

SI4501BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R

SI4501BDY-T1-GE3 Datasheet PDF

Vishay Intertechnology

Small Signal Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET

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