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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4501DY Datasheet PDF
SI4501DY
Part 3D Model
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SI4501DY Datasheet PDF (8 Pages)
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SI4501DY Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SO
Drain to Source Resistance (on) (Rds)
18.0 mΩ
Polarity
N-Channel, P-Channel
Power Dissipation
2.50 W
Breakdown Voltage (Drain to Source)
30.0 V
Continuous Drain Current (Ids)
-9.00 A to 9.00 A

SI4501DY Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

SI4501DY Documents

Vishay Siliconix
8 Pages / 0.08 MByte

SI4501 Documents

VISHAY
SOIC-8 N+P 30V,8V 12A 13.5mΩ,21mΩ
Vishay Siliconix
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET N/P-CH 30V/8V 8SOIC
Vishay Semiconductor
Trans MOSFET N/P-CH 30V/8V 9A/6.4A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET N/P-CH 30V/8V 8-SOIC
VISHAY
SOIC N+P 30V/8V 6.3A/4.1A
Vishay Semiconductor
Trans MOSFET N/P-CH 30V/8V 6.3A/4.1A 8Pin SOIC N T/R
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
Vishay Semiconductor
Trans MOSFET N/P-CH 30V/8V 6.3A/4.1A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET 30/8V 8.8/5.7A 1.3W
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