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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI4599DY-T1-GE3 Datasheet PDF
SI4599DY-T1-GE3
Part 3D Model
$ 4.677
SI4599DY-T1-GE3 Datasheet PDF (15 Pages)
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SI4599DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0295 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
3 W
Threshold Voltage
1.4 V
Drain to Source Voltage (Vds)
40 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3 W

SI4599DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃

SI4599DY-T1-GE3 Documents

Vishay Semiconductor
15 Pages / 0.23 MByte
Vishay Semiconductor
15 Pages / 0.28 MByte

SI4599DYT1 Documents

VISHAY
SOIC-8 N+P 40V 5.6A 29.5mΩ,37mΩ
Vishay Siliconix
MOSFET N/P-CH 40V 6.8A 8SOIC
Vishay Semiconductor
Trans MOSFET N/P-CH 40V 5.6A/4.7A 8Pin SOIC N T/R
Vishay Intertechnology
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