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Part Datasheet Search > MOSFETs > VISHAY > SI4599DY-T1-GE3 Datasheet PDF
SI4599DY-T1-GE3
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SI4599DY-T1-GE3 Datasheet PDF (15 Pages)
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SI4599DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0295 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
2 W
Threshold Voltage
1.4 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
5.6A
Input Capacitance (Ciss)
640pF @20V(Vds)
Input Power (Max)
3W, 3.1W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3 W

SI4599DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI4599DY-T1-GE3 Documents

VISHAY
15 Pages / 0.3 MByte
VISHAY
16 Pages / 0.3 MByte

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