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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4688DY-T1-GE3 Datasheet PDF
SI4688DY-T1-GE3
Part 3D Model
$ 0.01

SI4688DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOIC-8
Polarity
N-Channel
Power Dissipation
1.4W (Ta)
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
12.0 A
Input Capacitance (Ciss)
1580pF @15V(Vds)
Power Dissipation (Max)
1.4W (Ta)

SI4688DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4688DY-T1-GE3 Documents

Vishay Siliconix
6 Pages / 0.09 MByte
Vishay Siliconix
9 Pages / 0.23 MByte

SI4688DYT1 Documents

Vishay Semiconductor
MOSFET N-CH 30V 8.9A 8-SOIC
Vishay Siliconix
MOSFET N-CH 30V 8.9A 8-SOIC
Vishay Semiconductor
MOSFET N-CH 30V 8.9A 8-SOIC
Vishay Siliconix
MOSFET N-CH 30V 8.9A 8-SOIC
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