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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI4800BDY-T1-E3 Datasheet PDF
SI4800BDY-T1-E3
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SI4800BDY-T1-E3 Datasheet PDF (9 Pages)
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SI4800BDY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Power Rating
2.5 W
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0185 Ω
Polarity
N-Channel
Power Dissipation
800 mW
Threshold Voltage
1.8 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
9.00 A
Rise Time
12 ns
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1300 mW

SI4800BDY-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Width
4 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃

SI4800BDY-T1-E3 Documents

Vishay Semiconductor
9 Pages / 0.17 MByte
Vishay Semiconductor
9 Pages / 0.24 MByte

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