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SI4812DY-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SO-8

Description:

N-Channel 30V (D-S) MOSFET with Schottky Diode

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SI4812DY-T1-E3 Datasheet PDF (6 Pages)

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SI4812DY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

SO-8

Drain to Source Resistance (on) (Rds)

28.0 mΩ

Polarity

N-Channel

Power Dissipation

1.40 W

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

6.90 A

SI4812DY-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

SI4812DY-T1-E3 Environmental

SI4812DY-T1-E3 Documents

SI4812DY-T1-E3 Other Datasheet PDF

Vishay Siliconix

6 Pages / 0.08 MByte

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SI4812DY-T1 Datasheet PDF

VISHAY

SOIC N-CH 30V 6.9A

SI4812DY-T1 Datasheet PDF

Vishay Semiconductor

SI4812DY-T1-E3 Datasheet PDF

Vishay Siliconix

N-Channel 30V (D-S) MOSFET with Schottky Diode

SI4812DY-T1-E3 Datasheet PDF

VISHAY

Trans MOSFET N-CH 30V 6.9A 8Pin SOIC N T/R

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