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SI4840BDY-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOIC-8

Description:

MOSFET N-CH 40V 19A 8SOIC

Pictures:

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Documentation:

SI4840BDY-T1-E3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI4840BDY-T1-E3 Datasheet PDF (10 Pages)

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SI4840BDY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

9 mΩ

Power Dissipation

6 W

Threshold Voltage

1 V

Drain to Source Voltage (Vds)

40 V

Rise Time

150 ns

Input Capacitance (Ciss)

2000pF @20V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Junction Temperature (Max)

150 ℃

Power Dissipation (Max)

2.5W (Ta), 6W (Tc)

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SI4840BDY-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Cut Tape (CT)

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI4840BDY-T1-E3 Environmental

SI4840BDY-T1-E3 Function Overview

SI4840BDY-T1-E3 Documents

SI4840BDY-T1-E3 Datasheet

Vishay Siliconix

10 Pages / 0.23 MByte

SI4840BDY-T1-E3 Other Datasheet PDF

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10 Pages / 0.23 MByte

SI4840BDY-T1-E3 Notice File

Vishay Siliconix

6 Pages / 0.24 MByte

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SI4840BDY-T1-E3 Datasheet PDF

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SI4840BDY-T1-GE3 Datasheet PDF

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MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/

SI4840BDY-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET N-CH 40V 19A 8SOIC

SI4840BDY-T1-GE3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/

SI4840BDY-T1-E3 Datasheet PDF

Vishay Intertechnology

SI4840BDYT1E3 Datasheet PDF

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