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SI4840BDY-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

NSOIC-8

Description:

MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ω; ID 10A; SO-8; PD 1.56W; VGS +/

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Documentation:

SI4840BDY-T1-GE3 Datasheet (10 Pages)

Package Outline Dimension on7 Page 8 Page

Part Numbering System on1 Page

SI4840BDY-T1-GE3 Datasheet PDF (10 Pages)

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SI4840BDY-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

NSOIC-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0074 Ω

Polarity

N-Channel

Power Dissipation

6 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

40 V

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.56 W

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SI4840BDY-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

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SI4840BDY-T1-GE3 Environmental

SI4840BDY-T1-GE3 Export Classifications

SI4840BDY-T1-GE3 Function Overview

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