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Part Datasheet Search > MOSFETs > VISHAY > SI4892DY-T1-E3 Datasheet PDF
SI4892DY-T1-E3
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SI4892DY-T1-E3 Datasheet PDF (5 Pages)
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SI4892DY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOP-8
Drain to Source Resistance (on) (Rds)
20.0 mΩ
Polarity
N-Channel
Power Dissipation
3.10 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
8.80 A
Rise Time
11 ns
Input Power (Max)
1.6 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3100 mW

SI4892DY-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4892DY-T1-E3 Documents

VISHAY
5 Pages / 0.08 MByte
VISHAY
8 Pages / 0.22 MByte

SI4892DYT1 Documents

VISHAY
SOIC N-CH 30V 8.8A
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.01Ω; ID 8.8A; SO-8; PD 1.6W; VGS +/-20V; -55d
Vishay Siliconix
MOSFET N-CH 30V 8.8A 8-SOIC
VISHAY
SOIC N-CH 30V 8.8A
Vishay Semiconductor
MOSFET N-CH 30V 8.8A 8-SOIC
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