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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4920DY-T1-E3 Datasheet PDF
SI4920DY-T1-E3
Part 3D Model
$ 1.395
SI4920DY-T1-E3 Datasheet PDF (5 Pages)
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SI4920DY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
0.035 Ω
Polarity
Dual N-Channel
Power Dissipation
2 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
6.90 A
Thermal Resistance
62.5℃/W (RθJA)
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

SI4920DY-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
5 mm
Size-Height
1.55 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4920DY-T1-E3 Documents

Vishay Siliconix
5 Pages / 0.06 MByte
Vishay Siliconix
5 Pages / 0.07 MByte

SI4920DYT1 Documents

Vishay Siliconix
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
SOIC N-CH 30V 6.9A
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay Siliconix
MOSFET DUAL N-CH 30V 8-SOIC
VISHAY
SOIC N-CH 30V 6.9A
Vishay Semiconductor
Trans MOSFET N-CH 30V 6.9A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET DUAL N-CH 30V 8-SOIC
VISHAY
SOIC N-CH 30V 6.9A
Vishay Semiconductor
Trans MOSFET N-CH 30V 6.9A 8Pin SOIC N T/R
Vishay Intertechnology
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