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Part Datasheet Search > VISHAY > SI4920DY-T1-GE3 Datasheet PDF
SI4920DY-T1-GE3
Part 3D Model
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SI4920DY-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
6.9A
Rise Time
10 ns
Input Power (Max)
2 W
Fall Time
15 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

SI4920DY-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI4920DY-T1-GE3 Documents

VISHAY
5 Pages / 0.08 MByte
VISHAY
8 Pages / 0.09 MByte

SI4920DYT1 Documents

Vishay Siliconix
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
SOIC N-CH 30V 6.9A
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Vishay Siliconix
MOSFET DUAL N-CH 30V 8-SOIC
VISHAY
SOIC N-CH 30V 6.9A
Vishay Siliconix
MOSFET DUAL N-CH 30V 8-SOIC
Vishay Semiconductor
Trans MOSFET N-CH 30V 6.9A 8Pin SOIC N T/R
VISHAY
SOIC N-CH 30V 6.9A
Vishay Semiconductor
Trans MOSFET N-CH 30V 6.9A 8Pin SOIC N T/R
Vishay Intertechnology
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