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SI4946BEY-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET N-CH 60V 5.3A 8Pin SOIC N T/R

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Documentation:

SI4946BEY-T1-E3 Datasheet (7 Pages)

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SI4946BEY-T1-E3 Datasheet PDF (7 Pages)

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SI4946BEY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Power Rating

2.6 W

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.033 Ω

Polarity

N-Channel, Dual N-Channel

Power Dissipation

3.7 W

Threshold Voltage

2.4 V

Input Capacitance

840pF @30V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60 V

Continuous Drain Current (Ids)

65.0 A

Thermal Resistance

50℃/W (RθJA)

Input Capacitance (Ciss)

840pF @30V(Vds)

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

3.7 W

View Datasheet >

SI4946BEY-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-50℃ ~ 175℃

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SI4946BEY-T1-E3 Environmental

SI4946BEY-T1-E3 Export Classifications

SI4946BEY-T1-E3 Function Overview

SI4946BEY-T1-E3 Documents

SI4946BEY-T1-E3 Datasheet

Vishay Semiconductor

7 Pages / 0.11 MByte

SI4946BEY-T1-E3 Other Datasheet PDF

Vishay Semiconductor

10 Pages / 0.25 MByte

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