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SI4947ADY-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOIC-8

Description:

Trans MOSFET P-CH 30V 3.9A 8Pin SOIC N T/R

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Documentation:

SI4947ADY-T1-E3 Datasheet (5 Pages)

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SI4947ADY-T1-E3 Datasheet PDF (5 Pages)

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SI4947ADY-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SOIC-8

Drain to Source Resistance (on) (Rds)

0.135 Ω

Polarity

Dual P-Channel

Power Dissipation

1.2 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

-3.00 A

Rise Time

9 ns

Thermal Resistance

87℃/W (RθJA)

Input Power (Max)

1.2 W

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2 W

View Datasheet >

SI4947ADY-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Cut Tape (CT)

Size-Length

5 mm

Size-Width

4 mm

Size-Height

1.55 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI4947ADY-T1-E3 Environmental

SI4947ADY-T1-E3 Function Overview

SI4947ADY-T1-E3 Documents

SI4947ADY-T1-E3 Datasheet

Vishay Siliconix

5 Pages / 0.09 MByte

SI4947ADY-T1-E3 Other Datasheet PDF

Vishay Siliconix

5 Pages / 0.09 MByte

SI4947ADY-T1-E3 Other References

Vishay Siliconix

1 Pages / 0.12 MByte

SI4947ADYT1 Documents

SI4947ADY-T1 Datasheet PDF

Vishay Siliconix

Small Signal Field-Effect Transistor, 3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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SI4947ADY-T1-E3 Datasheet PDF

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SI4947ADY-T1-E3 Datasheet PDF

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SI4947ADY-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH Si 30V 3.9A 8Pin SOIC N T/R

SI4947ADY-T1-E3 Datasheet PDF

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