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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI4947DY Datasheet PDF
SI4947DY
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SI4947DY Datasheet PDF (5 Pages)
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SI4947DY Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Drain to Source Resistance (on) (Rds)
85.0 mΩ
Polarity
P-Channel
Power Dissipation
2.00 W
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
-3.50 A to 3.50 A

SI4947DY Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm

SI4947DY Documents

Vishay Siliconix
5 Pages / 0.07 MByte

SI4947 Documents

VISHAY
SOIC P-CH 30V 3.9A
Vishay Siliconix
Trans MOSFET P-CH 30V 3.9A 8Pin SOIC N T/R
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MOSFET 30V 3.9A 2W 80mohm @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 30V 3.9A 8Pin SOIC N T/R
VISHAY
SOIC P-CH 30V 3A
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Trans MOSFET P-CH 30V 3A 8Pin SOIC
Vishay Semiconductor
Trans MOSFET P-CH Si 30V 3.9A 8Pin SOIC N T/R
Vishay Siliconix
MOSFET 30V 3.5A 2W
Vishay Siliconix
Small Signal Field-Effect Transistor, 3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
VISHAY
Transistor: P-MOSFET x2; unipolar; -30V; -3.9A; 2W; SO8
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