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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI5441DC-T1 Datasheet PDF
SI5441DC-T1
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SI5441DC-T1 Datasheet PDF (6 Pages)
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SI5441DC-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Drain to Source Resistance (on) (Rds)
55.0 mΩ
Polarity
P-Channel
Power Dissipation
1.30 W
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
-3.90 A

SI5441DC-T1 Documents

Vishay Siliconix
6 Pages / 0.09 MByte
Vishay Siliconix
5 Pages / 0.09 MByte

SI5441 Documents

VISHAY
ChipFET-8P-CH 20V 4.4A 45mΩ
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.036Ω; ID -4.4A; 1206-8 ChipFET; PD 1.3W
VISHAY
ChipFET-8P-CH 20V 4.4A 45mΩ
Vishay Siliconix
Trans MOSFET P-CH 20V 4.4A 8Pin Chip FET T/R
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.036Ω; ID -4.4A; 1206-8 ChipFET; PD 1.3W
Vishay Semiconductor
MOSFET 20V 6.1A 2.5W 45mohm @ 4.5V
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Trans MOSFET P-CH 20V 3.9A 8Pin Chip FET T/R
Vishay Siliconix
MOSFET P-CH 20V 3.9A 1206-8
Vishay Siliconix
MOSFET P-CH 20V 3.9A 1206-8
VISHAY
Chip P-CH 20V 3.9A
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