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Part Datasheet Search > MOSFETs > VISHAY > SI7617DN-T1-GE3 Datasheet PDF
SI7617DN-T1-GE3
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SI7617DN-T1-GE3 Datasheet PDF (13 Pages)
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SI7617DN-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerPak-1212-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0103 Ω
Polarity
P-Channel
Power Dissipation
3.7 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
-35.0 A
Input Capacitance (Ciss)
1800pF @15V(Vds)
Input Power (Max)
52 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3700 mW

SI7617DN-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI7617DN-T1-GE3 Documents

VISHAY
13 Pages / 0.59 MByte
VISHAY
14 Pages / 0.54 MByte
VISHAY
4 Pages / 0.27 MByte
VISHAY
5 Pages / 0.05 MByte

SI7617DNT1 Documents

VISHAY
PowerPak1212-8P-CH 30V 35A 12.3mΩ
Vishay Siliconix
30V 35A 52W 12.3mohm @ 10V
Vishay Semiconductor
Trans MOSFET P-CH 30V 13.9A 8Pin PowerPAK 1212 T/R
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