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SI7850DP-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

PowerPAKSO-8

Description:

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6.2A; PowerPAK SO-8; PD 1.8W; -55de

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Documentation:

SI7850DP-T1-E3 Datasheet (11 Pages)

Package Outline Dimension on5 Page 6 Page 7 Page

Part Numbering System on1 Page

SI7850DP-T1-E3 Datasheet PDF (11 Pages)

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SI7850DP-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

PowerPAKSO-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.018 Ω

Polarity

N-Channel

Power Dissipation

1.8 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

60 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

10.3 A

Rise Time

10 ns

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.8 W

View Datasheet >

SI7850DP-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Cut Tape (CT)

Size-Length

4.9 mm

Size-Width

5.89 mm

Size-Height

1.04 mm

Operating Temperature

-55℃ ~ 150℃

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SI7850DP-T1-E3 Environmental

SI7850DP-T1-E3 Function Overview

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