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SI7850DP-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SO-8

Description:

PowerPak-8 N-CH 60V 6.2A 22mΩ

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Documentation:

SI7850DP-T1-GE3 Datasheet (11 Pages)

Package Outline Dimension on5 Page 6 Page 7 Page

Part Numbering System on1 Page

SI7850DP-T1-GE3 Datasheet PDF (11 Pages)

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SI7850DP-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SO-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.018 Ω

Polarity

N-Channel

Power Dissipation

1.8 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

10.3 A

Rise Time

10 ns

Input Power (Max)

1.8 W

Fall Time

12 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1800 mW

View Datasheet >

SI7850DP-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI7850DP-T1-GE3 Environmental

SI7850DP-T1-GE3 Function Overview

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