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Part Datasheet Search > MOSFETs > VISHAY > SI7850DP-T1-GE3 Datasheet PDF
SI7850DP-T1-GE3
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SI7850DP-T1-GE3 Datasheet PDF (11 Pages)
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SI7850DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.018 Ω
Polarity
N-Channel
Power Dissipation
1.8 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
10.3 A
Rise Time
10 ns
Input Power (Max)
1.8 W
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1800 mW

SI7850DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI7850DP-T1-GE3 Documents

VISHAY
11 Pages / 0.3 MByte
VISHAY
11 Pages / 0.3 MByte

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