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Part Datasheet Search > MOSFETs > VISHAY > SI9435BDY-T1-E3 Datasheet PDF
SI9435BDY-T1-E3
Part 3D Model
$ 0.235
SI9435BDY-T1-E3 Datasheet PDF (6 Pages)
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SI9435BDY-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Drain to Source Resistance (on) (Rds)
42 mΩ
Polarity
P-Channel
Power Dissipation
2.5 W
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
-5.70 A
Input Power (Max)
1.3 W

SI9435BDY-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SI9435BDY-T1-E3 Documents

VISHAY
6 Pages / 0.09 MByte
VISHAY
14 Pages / 0.17 MByte

SI9435BDYT1 Documents

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P-Channel 30V (D-S) MOSFET
Vishay Intertechnology
Transistor
VISHAY
SOIC P-CH 30V 4.1A
Vishay Semiconductor
Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
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SOIC-8P-CH 30V 5.7A 42mΩ
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Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
Vishay Semiconductor
Trans MOSFET P-CH 30V 4.1A 8Pin SOIC N T/R
VISHAY
SOIC-8P-CH 30V 5.7A 42mΩ
Vishay Semiconductor
MOSFET 30V 5.7A 2.5W 42mohm @ 10V
Vishay Siliconix
P-Channel 30V 0.042Ω 1.3W Surface Mount Power Mosfet - SOIC-8
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