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SI9945DY
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SI9945DY Datasheet PDF (3 Pages)
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SI9945DY Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SO-8
Number of Channels
2 Channel
Drain to Source Resistance (on) (Rds)
76 mΩ
Polarity
N-Channel
Power Dissipation
2 W
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
3.30 A
Rise Time
7.5 ns
Fall Time
7 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

SI9945DY Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
4.9 mm
Size-Width
3.9 mm
Size-Height
1.75 mm

SI9945DY Documents

Fairchild
3 Pages / 0.18 MByte
Fairchild
3 Pages / 0.23 MByte

SI9945 Documents

VISHAY
SOIC-8 Dual N 60V 4.3A 58mΩ
Vishay Siliconix
MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W
VISHAY
Transistor: N-MOSFET x2; unipolar; 60V; 5.3A; 3.1W; SO8
Vishay Semiconductor
MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W
Vishay Siliconix
MOSFET S0-8 60V 3.7A 2.4W
VISHAY
SOIC N-CH 60V 3.7A
Fairchild
Trans MOSFET N-CH 60V 3.3A 8Pin SOIC N T/R
VISHAY
Trans MOSFET N-CH 60V 3.7A Automotive 8Pin SOIC
VISHAY
SOIC N-CH 60V 3.7A
Vishay Siliconix
MOSFET, Power; Dual N; 60V; + 20V; 2.4W; SO-8; 75A (Continuous); -55℃
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