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Part Datasheet Search > MOSFETs > VISHAY > SIR426DP-T1-GE3 Datasheet PDF
SIR426DP-T1-GE3
Part 3D Model
$ 0.276
SIR426DP-T1-GE3 Datasheet PDF (13 Pages)
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SIR426DP-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0105 Ω
Polarity
N-Channel
Power Dissipation
4.8 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
40 V
Continuous Drain Current (Ids)
30.0 A
Rise Time
15 ns
Input Capacitance (Ciss)
1160pF @20V(Vds)
Input Power (Max)
41.7 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃

SIR426DP-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.15 mm
Size-Width
5.15 mm
Size-Height
1.04 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
2500

SIR426DP-T1-GE3 Documents

VISHAY
13 Pages / 0.31 MByte
VISHAY
14 Pages / 0.3 MByte
VISHAY
4 Pages / 0.27 MByte

SIR426DPT1 Documents

VISHAY
SOIC-8 N-CH 40V 30A 10.5mΩ
Vishay Siliconix
40V 30A 41.7W 10.5mohm @ 10V
Vishay Semiconductor
MOSFET 40V 30A 41.7W 10.5mohm @ 10V
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