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Part Datasheet Search > MOSFETs > VISHAY > SIS412DN-T1-GE3 Datasheet PDF
SIS412DN-T1-GE3
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SIS412DN-T1-GE3 Datasheet PDF (13 Pages)
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SIS412DN-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerPak-1212-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.02 Ω
Polarity
N-Channel
Power Dissipation
15.6 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
12A
Input Capacitance (Ciss)
435pF @15V(Vds)
Input Power (Max)
15.6 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.2W (Ta), 15.6W (Tc)

SIS412DN-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

SIS412DN-T1-GE3 Documents

VISHAY
13 Pages / 0.51 MByte
VISHAY
13 Pages / 0.55 MByte
VISHAY
3 Pages / 0.08 MByte

SIS412DNT1 Documents

VISHAY
PowerPak1212-8 N-CH 30V 12A 24mΩ
Vishay Siliconix
MOSFET N-CH 30V 12A 1212-8 PPAK
Vishay Semiconductor
Trans MOSFET N-CH 30V 8.7A 8Pin PowerPAK 1212 T/R
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