SKW25N120 Datasheet PDF - Infineon

●The SKW25N120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode addressing soft switching/resonant and hard switching topologies. Eoff is 30% lower when compared to previous generation combined with low conduction losses. NPT technology offers very tight parameter distribution and temperature stable behaviour.

● Short circuit withstand time 10µs

● Designed for operation above 30kHz

● High ruggedness

● Parallel switching capability