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Part Datasheet Search > TVS Diodes > Vishay Semiconductor > SM8S33AHE3/2D Datasheet PDF
SM8S33AHE3/2D
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SM8S33AHE3/2D Datasheet PDF (5 Pages)
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SM8S33AHE3/2D Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
2 Pin
Case/Package
DO-218AB
Number of Positions
2 Position
Power Dissipation
8.00 W
Clamping Voltage
53.3 V
Test Current
5 mA
Max Breakdown Voltage
40.6 V
Peak Pulse Power
6.6 kW
Min Breakdown Voltage
36.7 V
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 175℃

SM8S33AHE3/2D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
13.7 mm
Size-Width
8.7 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 175℃

SM8S33AHE3/2D Documents

Vishay Semiconductor
5 Pages / 0.09 MByte
Vishay Semiconductor
7 Pages / 0.36 MByte

SM8S33AHE32 Documents

VISHAY
TVS Diode, SM8S Series, Unidirectional, 33V, 53.3V, DO-218AB, 2Pins
Vishay Semiconductor
VISHAY SM8S33AHE3/2D TVS Diode, SM8S Series, Unidirectional, 33V, 53.3V, DO-218AB, 2Pins
Vishay Semiconductor
Diode TVS Single Uni-Dir 33V 6.6kW 2Pin DO-218AB T/R
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