SN74CB3Q3257RGYR Datasheet PDF - TI

●The SN74CB3Q3257RGYR is a high-bandwidth FET Bus Switch utilizes a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3257 device provides an optimized interface solution ideally suited for broadband communications, networking and data-intensive computing systems. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

● Low and flat ON-state resistance (ron) characteristics over operating range (ron= 4R typical)

● Rail-to-rail switching on data I/O ports

● Bidirectional data flow with near-zero propagation delay

● Low input and output capacitance minimizes loading and signal distortion

● Fast switching frequency (f OE = 20MHz maximum)

● Data and control inputs provide undershoot clamp diodes

● Low power consumption

● Control inputs can be driven by TTL or 5/3.3V CMOS outputs

● Ioff Supports partial-power-down mode operation

● 5V Tolerant I/Os with device powered up or powered down

● Green product and no Sb/Br