●The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
●The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
●This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
●To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
● High-Bandwidth Data Path (up to 500 MHz(1))
● 5-V-Tolerant I/Os With Device Powered Up or Powered Down
● Low and Flat ON-State Resistance (ron)
●Characteristics Over Operating Range (ron = 4 Ω Typ)
● Rail-to-Rail Switching on Data I/O Ports
● 0- to 5-V Switching With 3.3-V VCC
● 0- to 3.3-V Switching With 2.5-V VCC
● Bidirectional Data Flow With Near-Zero Propagation Delay
● Low Input/Output Capacitance Minimizes
●Loading and Signal Distortion
●(Cio(OFF) = 3.5 pF Typ)
● Fast Switching Frequency (f OE = 20 MHz Max)
● Data and Control Inputs Provide Undershoot Clamp Diodes
● Low Power Consumption (ICC = 0.25 mA Typ)
● VCC Operating Range From 2.3 V to 3.6 V
● Data I/Os Support 0- to 5-V Signaling Levels
●(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
● Control Inputs Can Be Driven by TTL or
●5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA
●Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
● 2000-V Human-Body Model (A114-B, Class II)
● 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: USB Interface,
●Differential Signal Interface, Bus Isolation, Low-Distortion
●Signal Gating
●## SUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONS
● Controlled Baseline
● One Assembly and Test Site
● One Fabrication Site
● Available in Military (–55°C to 125°C)
●Temperature Range
● Extended Product Life Cycle
● Extended Product-Change Notification
● Product Traceability
●(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, _CBT-C, CB3T, and CB3Q Signal-Switch Families_, literature number SCDA008.
