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Part Datasheet Search > MOSFETs > Infineon > SPB11N60C3 Datasheet PDF
SPB11N60C3
$ 1.958
SPB11N60C3 Datasheet PDF (18 Pages)
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SPB11N60C3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
650 V
Current Rating
11.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.34 Ω
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
11.0 A
Rise Time
5 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Input Power (Max)
125 W
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125W (Tc)

SPB11N60C3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SPB11N60C3 Documents

Infineon
18 Pages / 0.32 MByte
Infineon
14 Pages / 0.44 MByte
Infineon
1 Pages / 0.12 MByte

SPB11N60 Documents

Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
Infineon
D2PAK N-CH 600V 11A
Siemens Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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