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SPB18P06P
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SPB18P06P Datasheet PDF (8 Pages)
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SPB18P06P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-60.0 V
Current Rating
-18.6 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Polarity
P-CH
Power Dissipation
81.1W (Ta)
Input Capacitance
860 pF
Gate Charge
33.0 nC
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
18.6 A
Input Capacitance (Ciss)
860pF @25V(Vds)
Input Power (Max)
81.1 W
Power Dissipation (Max)
81.1W (Ta)

SPB18P06P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Width
9.25 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

SPB18P06P Documents

Infineon
8 Pages / 0.43 MByte
Infineon
5 Pages / 0.03 MByte

SPB18P06 Documents

Infineon
Trans MOSFET P-CH 60V 18.6A 3Pin TO-263 T/R
Infineon
D2PAK P-CH 60V 18.6A
Infineon
P-channel Mosfets Power-transistor
Infineon
D2PAK P-CH 60V 18.6A
Siemens Semiconductor
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