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Part Datasheet Search > MOSFETs > Infineon > SPB18P06P G Datasheet PDF
SPB18P06P G
$ 0.308
SPB18P06P G Datasheet PDF (8 Pages)
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SPB18P06P G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-18.6 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.101 Ω
Polarity
P-Channel
Power Dissipation
81.1 W
Threshold Voltage
4 V
Input Capacitance
860 pF
Gate Charge
33.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
18.6 A
Rise Time
5.8 ns
Input Capacitance (Ciss)
860pF @25V(Vds)
Input Power (Max)
81.1 W
Fall Time
11 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
81.1W (Ta)

SPB18P06P G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

SPB18P06P G Documents

Infineon
8 Pages / 0.43 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.16 MByte

SPB18P06 Documents

Infineon
Trans MOSFET P-CH 60V 18.6A 3Pin TO-263 T/R
Infineon
D2PAK P-CH 60V 18.6A
Infineon
P-channel Mosfets Power-transistor
Infineon
D2PAK P-CH 60V 18.6A
Siemens Semiconductor
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