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Part Datasheet Search > MOSFETs > Infineon > SPB80P06PGATMA1 Datasheet PDF
SPB80P06PGATMA1
$ 2.199
SPB80P06PGATMA1 Datasheet PDF (11 Pages)
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SPB80P06PGATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-80.0 A
Case/Package
TO-263-3
Power Rating
340 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.021 Ω
Polarity
P-Channel
Power Dissipation
340 W
Threshold Voltage
3 V
Input Capacitance
5.03 nF
Gate Charge
173 nC
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
80.0 A
Rise Time
18 ns
Input Capacitance (Ciss)
4026pF @25V(Vds)
Fall Time
30 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
340 W

SPB80P06PGATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.31 mm
Size-Width
9.45 mm
Size-Height
4.57 mm
Operating Temperature
-55℃ ~ 175℃

SPB80P06PGATMA1 Documents

Infineon
11 Pages / 0.59 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

SPB80P06 Documents

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Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
Infineon
Trans MOSFET P-CH 60V 80A 3Pin(2+Tab) TO-263
Infineon
D2PAK P-CH 60V 80A
Infineon
D2PAK P-CH 60V 80A
Infineon
D2PAK P-CH 60V 80A
Siemens Semiconductor
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