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SPD02N80C3BTMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252-3

Description:

DPAK N-CH 800V 2A

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Documentation:

SPD02N80C3BTMA1 Datasheet (10 Pages)

Package Outline Dimension on9 Page

SPD02N80C3BTMA1 Datasheet PDF (10 Pages)

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SPD02N80C3BTMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Power Rating

42 W

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

2.4 Ω

Polarity

N-CH

Power Dissipation

42 W

Threshold Voltage

2.1 V

Drain to Source Voltage (Vds)

800 V

Breakdown Voltage (Drain to Source)

800 V

Continuous Drain Current (Ids)

Rise Time

15 ns

Input Capacitance (Ciss)

290pF @100V(Vds)

Fall Time

18 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

42W (Tc)

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SPD02N80C3BTMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tape & Reel (TR)

Size-Length

6.5 mm

Size-Width

6.22 mm

Size-Height

2.3 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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