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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SQ2310ES-T1-GE3 Datasheet PDF
SQ2310ES-T1-GE3
$ 0.328
SQ2310ES-T1-GE3 Datasheet PDF (1 Pages)
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SQ2310ES-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.024 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
600 mV
Drain to Source Voltage (Vds)
20 V
Operating Temperature (Max)
175 ℃

SQ2310ES-T1-GE3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)

SQ2310ES-T1-GE3 Documents

Vishay Semiconductor
1 Pages / 0.17 MByte
Vishay Semiconductor
2 Pages / 0.09 MByte

SQ2310EST1 Documents

VISHAY
SOT-23-3 N-CH 20V 6A 30mΩ
VISHAY
Trans MOSFET N-CH 20V 6A Automotive 3Pin SOT-23 T/R
Vishay Siliconix
MOSFET N-CH 20V 6A SOT23
Vishay Semiconductor
Trans MOSFET N-CH 20V 6A Automotive 3Pin SOT-23 T/R
Vishay Semiconductor
Vishay Semiconductor
Trans MOSFET N-CH 20V 6A 3Pin SOT-23 T/R
Vishay Intertechnology
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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