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SS8050DBU Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-226-3

Description:

SS8050 Series NPN 1W 25V 1.5A Through Hole Epitaxial Transistor - TO-92

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Documentation:

SS8050DBU Datasheet (6 Pages)

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SS8050DBU Datasheet PDF (6 Pages)

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SS8050DBU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

100 MHz

Number of Pins

3 Pin

Case/Package

TO-226-3

Number of Positions

3 Position

Power Dissipation

1 W

Breakdown Voltage (Collector to Emitter)

25 V

hFE Min

160 @100mA, 1V

Input Power (Max)

1 W

DC Current Gain (hFE)

160

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

1000 mW

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SS8050DBU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bag

Material

Silicon

Size-Length

4.58 mm

Size-Width

3.86 mm

Size-Height

4.58 mm

Operating Temperature

150℃ (TJ)

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SS8050DBU Environmental

SS8050DBU Function Overview

SS8050DBU Documents

SS8050DBU Datasheet

ON Semiconductor

6 Pages / 0.29 MByte

SS8050DBU Other Datasheet PDF

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