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Part Datasheet Search > BJTs > Comchip Technology > SS8050-G Datasheet PDF
SS8050-G
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SS8050-G Datasheet PDF (6 Pages)
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SS8050-G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Dissipation
300 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
25 V
hFE Min
100 @10mA, 1V
hFE Max
350
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

SS8050-G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

SS8050-G Documents

Comchip Technology
6 Pages / 0.12 MByte
Comchip Technology
5 Pages / 0.13 MByte

SS8050 Documents

CJ
SOT-323 NPN 25V 1500mA
SLKOR
20V1.5A
SK Hynix
NPN Ic=1.5A Vceo=25V hfe=200~350 fT=120MHz P=350mW
Fairchild
NPN Epitaxial Silicon Transistor
Samsung
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Galaxy Semi-Conductor
Small Signal Bipolar Transistor,
NXP
TRANSISTOR 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
ON Semiconductor
NPN Epitaxial Silicon Transistor, 2000-FNFLD
Bruckewell Technology
Genral Purpose Transistor
Micro Commercial Components
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92, 3 PIN
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