●GENERAL DESCRIPTION
●The SSM2212 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.
●With its extremely low input base spreading resistance (rbb" is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the SSM2212 can achieve outstanding signal-to noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.
●Excellent matching of the current gain (ΔhFE) to about 0.5% and low VOS of less than 10 μV typical make the SSM2212 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.
●Stability of the matching parameters is guaranteed by protection diodes across the base-emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base-emitter junction.
●The SSM2212 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because a current mirror’s accuracy degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the SSM2212 does not need offset trimming in most circuit applications.
●The SSM2212 performance and characteristics are guaranteed over the extended temperature range of −40°C to +85°C.
●FEATURES
● Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz
● Excellent current gain match: 0.5%
● Low offset voltage (VOS): 200 μV maximum
● Outstanding offset voltage drift: 0.03 μV/°C
● High gain bandwidth product: 200 MHz
Part 3D Model
