SSM3K116TU Datasheet PDF - Toshiba

●TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • 2.5V drive • Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V)