SSM6J213FE Datasheet PDF - Toshiba

●TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance:RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)