SSM6J53FE Datasheet PDF - Toshiba

●TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V)