ST13007FP Datasheet PDF - ST Microelectronics

●DESCRIPTION

●The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.

●■ HIGH VOLTAGE CAPABILITY

●■ NPN TRANSISTOR

●■ LOW SPREAD OF DYNAMIC PARAMETERS

●■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

●■ VERY HIGH SWITCHING SPEED

●■ FULLY CHARACTERIZED AT 125 oC

●■ LARGE RBSOA

●APPLICATIONS

●■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

●■ SWITCH MODE POWER SUPPLIES