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Part Datasheet Search > MOSFETs > ST Microelectronics > STB12NK80ZT4 Datasheet PDF
STB12NK80ZT4
$ 2.709
STB12NK80ZT4 Datasheet PDF (22 Pages)
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STB12NK80ZT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
800 V
Current Rating
10.5 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.65 Ω
Polarity
N-Channel
Power Dissipation
190 W
Threshold Voltage
3.75 V
Drain to Source Voltage (Vds)
800 V
Breakdown Voltage (Drain to Source)
800 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
10.5 A
Rise Time
18 ns
Input Capacitance (Ciss)
2620pF @25V(Vds)
Input Power (Max)
190 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
190W (Tc)

STB12NK80ZT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

STB12NK80ZT4 Documents

ST Microelectronics
22 Pages / 0.67 MByte
ST Microelectronics
23 Pages / 0.65 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte

STB12NK80 Documents

ST Microelectronics
D2PAK N-CH 800V 10.5A
ST Microelectronics
D2PAK N-CH 800V 10.5A
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