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Part Datasheet Search > MOSFETs > ST Microelectronics > STB12NM50FDT4 Datasheet PDF
STB12NM50FDT4
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STB12NM50FDT4 Datasheet PDF (18 Pages)
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STB12NM50FDT4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
500 V
Current Rating
12.0 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
400 mΩ
Polarity
N-Channel
Power Dissipation
160W (Tc)
Input Capacitance
1.00 nF
Gate Charge
12.0 nC
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
10.0 ns
Input Capacitance (Ciss)
1000pF @25V(Vds)
Input Power (Max)
160 W
Power Dissipation (Max)
160W (Tc)

STB12NM50FDT4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Operating Temperature
-65℃ ~ 150℃ (TJ)

STB12NM50FDT4 Documents

ST Microelectronics
18 Pages / 0.47 MByte

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