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Part Datasheet Search > MOSFETs > ST Microelectronics > STB12NM50N Datasheet PDF
STB12NM50N
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STB12NM50N Datasheet PDF (10 Pages)
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STB12NM50N Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
500 V
Current Rating
11.0 A
Case/Package
TO-263-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
380 mΩ
Polarity
N-Channel
Power Dissipation
100 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
500 V
Breakdown Voltage (Drain to Source)
500 V
Continuous Drain Current (Ids)
6.70 A, 11.0 A
Rise Time
15 ns
Input Capacitance (Ciss)
940pF @50V(Vds)
Input Power (Max)
100 W
Fall Time
14 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature (Max)
150 ℃
Power Dissipation (Max)
100W (Tc)

STB12NM50N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

STB12NM50N Documents

ST Microelectronics
10 Pages / 0.11 MByte
ST Microelectronics
20 Pages / 0.55 MByte
ST Microelectronics
1 Pages / 0.13 MByte

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