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Part Datasheet Search > MOSFETs > ST Microelectronics > STB12NM50T4 Datasheet PDF
STB12NM50T4
$ 2.15
STB12NM50T4 Datasheet PDF (1 Pages)
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STB12NM50T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
550 V
Current Rating
12.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.3 Ω
Polarity
N-Channel
Power Dissipation
160 W
Threshold Voltage
4 V
Input Capacitance
1.00 nF
Gate Charge
39.0 nC
Drain to Source Voltage (Vds)
550 V
Breakdown Voltage (Drain to Source)
500 V
Breakdown Voltage (Gate to Source)
±30.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
10 ns
Input Capacitance (Ciss)
1000pF @25V(Vds)
Input Power (Max)
160 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
160W (Tc)

STB12NM50T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
10.4 mm
Size-Width
9.35 mm
Size-Height
4.6 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

STB12NM50T4 Documents

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1 Pages / 0.15 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
1 Pages / 0.13 MByte

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